Devices and Materials
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T. Alan et al. (Delft University of Technology)
A comparative study of the strength of Si, SiN and SiC used at nanoscales
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A. Baiano et al. (Delft University of Technology, Seiko-Epson Japan)
SPICE Modeling of Single-Grain Si TFTs using BSIMSOI
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A. Boogaard et al. (University of Twente)
Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD
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Y. Civale et al. (Delft University of Technology)
Electrical Characterization of Layer-Exchange Solid-Phase Epitaxy Si Diode Junctions
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Z.S. Houweling et al. (Utrecht University)
Dielectric properties of Hot Wire CVD silicon nitride applied in a-Si TFTs
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K. Jarolimek et al. (Radboud University Nijmegen)
Ab initio simulations of hydrogenated amorphoussilicon
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V. Jovanovic et al. (Delft University of Technology)
Integration of Junction FETs in Back-wafer Contacted Silicon-On-Glass Technology
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L. La Spina et al. (Delft University of Technology)
Aluminium Nitride Layers: One Way to Beat the Heat in Silicon-On-Glass Technology
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D. Liebig et al. (Hamburg University of Technology)
First Principle Cellular Automata Simulation of Transport in Short Channel MOS-FET for Self-Consistent Atomistic Modeling of Degradation in Ultra Thin Silicon-Dioxide Dielectrics
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S.L. Luxembourg et al. (Delft University of Technology)
Bandgap engineering using a-Si:H/a-SixNy:H superlattices
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N. Matsuki et al. (Delft University of Technology, Seiko-Epson Japan)
Modeling and Scanning Probe Microscopy on Local Electrical Properties of Coincidence Site Lattice Boundaries in Location-Controlled Silicon Islands
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G. Piccolo et al. (Delft University of Technology)
Low-Frequency Noise Characterization of Ultra-shallow Gate N-channel Junction Field Effect Transistors
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S. Put et al. (IMEC, KU Leuven, SCK?CEN, KH Kempen, University of Brussels)
In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels
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B. Rajasekharan et al. (University of Twente)
Dimensional scaling effects on transport properties of silicon p-i-n diodes
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J.L. van der Steen et al. (University of Twente, NXP Semiconductors)
Band Offset Measurements on Ultra-Thin (100) SOI MOSFETs
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M.P.J. Tiggelman et al. (University of Twente, NXP Research, Philips Research)
Separation of intrinsic dielectric and resistive electrode losses in ferroelectric capacitors at radio frequencies
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V. Verlaan et al. (University of Utrecht, ECN Solar Energy)
Rapidly Deposited Hot-wire CVD Silicon Nitride as Passivating Antireflection Coating on Solar Cells
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B. Vet et al. (Delft University of Technology)
Analytical evaluation of the efficiency and open circuit voltage limit in a-Si:H based solar cells
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F. Wessely et al. (Darmstadt University of Technology)
Mix-and-match Lithography Based Ultrathin- body SOI Nanowires and Schottky-S/D-FETs
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D.H.B. Wicaksono et al. (Delft University of Technology, Ecole Polytechnique Fédérale de Lausanne)
Optical Absorptivity and Thermal Property of LPCVD-Deposited Low-Stress Si-Rich Nitride Membrane for Far-Infrared Sensor
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F. Zaunert et al. (Darmstadt University of Technology)
Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process
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