Solid-state image sensors in deep sub-micron CMOS technology (DCS.5869)

Project nummer: dcs5869

Omschrijving van het onderzoek

The goal of this research project is to come to a better in-depth understanding of various "imaging" issues which go together with deep sub-micron CMOS technologies. Based on this knowledge high quality image sensors should become possible at low cost, in deep submicron baseline CMOS processes.
Image sensors fabricated in existing digital and analogue CMOS processes, benefit from the fact that in these technologies other large-volume products can be manufactured too. This makes CMOS image sensors price-wise attractive over more expensive CCD image sensors. CCD imagers are fabricated in a dedicated production process which is the main reason for their higher cost.
The primary goal of this project is to overcome the barriers for the realization of CMOS high quality image sensors in deep sub-micron CMOS technology. The main limitations in such an existing deep sub-micron processes are: the number of metal layers, the thickness of the junction, the electric field around the junction and the mechanical stress.

Gebruikers

Seven companies are involved in this project.

Projectleider

Prof.dr.ir. A.J.P. Theuwissen

Technische Universiteit Delft
Elektrotechniek, Wiskunde en Informatica
IRCTR

Postbus 5031
2600 GA Delft

Status van het project

Gestart	: 07-01-2004
Einddatum	: 02-08-2008

Trefwoorden

CCD, CMOS, Devices, Imaging, Sensor, Sub-micron.

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