Compound-semiconductor element CVD thin-film layers for EUV silicon detectors (10024)

Project nummer: 10024

Omschrijving van het onderzoek

With a new technique for chemical vapor deposition (CVD) of compound-semiconductor elements, thin-film layers of a few nanometer in thickness, down to a monolayer, will be investigated as a basis for the fabrication of robust silicon diodes that have exceptional high responsivity in the short wavelengths of radiation: from 10nm to 200nm (EUV, VUV, DUV). In particular, the aim is to control properties such as layer-stack composition, conductivity and robustness by introducing combinations of III-IV-V elements in the deposition process. The performance of the novel devices will be studied based on modeling, simulations and an extensive experimental program. Prototypes for particular advanced industrial applications will be created. At present pure boron depositions are used to fabricate the high-performance DUV/EUV detectors needed for future lithographic wafer steppers such as those under development at ASM Lithography (ASML). The research is performed with support and in close collaboration with ASML who will provide access both to their own unique EUV lithography test facilities and to specialized EUV metrology laboratories elsewhere. The CVD depositions themselves are performed in commercial Si/SiGe epitaxial reactor produced by ASM International.

Gebruikers

Five companies are involved in this project.

Projectleider

Prof.dr. L.K. Nanver
Technische Universiteit Delft
Delfts Instituut voor Micro-Electronica en Submicrontechnologie
Postbus 5031
2600 GA Delft

Status van het project

Startdatum:	01-07-2008
Einddatum:	30-06-2011

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