Plasma-assisted atomic layer deposition for processing at the nano-scale (EMM.6174)

Project nummer: emm6174

Omschrijving van het onderzoek

The aim of the project is to study the extension of the presently very relevant "atomic layer deposition" (ALD) method, which is basically the deposition of single atomic layers in a self-limiting manner, to plasma processes. It is expected that this plasma-assisted-ALD or PA-ALD will open up new routes in thin film growth such that the typical ALD advantages, such as ultimate control of filmthickness, extremely-high conformality and good uniformity, will be extended with new advantages such as an increased choice in materials and precursors, higher throughput processing, and processing at reduced substrate temperatures. This will lead to a broader range of ALD-like processes which will form a better alternative for the "traditional" chemical and physical vapor deposition methods. The reason for this is that ALD-like processes yield solutions for several technological problems in newly emerging technologies which more and more require ultimate control of film growth. In the project, the possibilities of PA-ALD will be explored by focusing on two different types of applications of the PA-ALD processes: 1) high-aspect ratio structures in semiconductor devices and 2) high-surface area materials mainly for catalysis. Furthermore, a large part of the work will be concentrated on investigations of the fundamentals of PA-ALD processes.
Utilisation
Although PA-ALD processes have numerous applications in all kinds of (emerging) technologies, the research will be focused on the current issues in Cu interconnect technology for semiconductor devices and the very promising applications of PA-ALD in the future production of materials for catalysis. The work with respect to the Cu interconnect technology is mainly relevant for the partners in the semiconductor industry. To explore the possibilities of PA-ALD a new, multi-purpose viscous-flow PA-ALD reactor will be designed. This PA-ALD reactor can be operated with different plasma sources although the implementation of the cascaded arc plasma source will be the main subject of research. The research and the materials and processes under investigation will periodically be evaluated together with the industrial partners and the "user-committee", which will play a crucial role in this project.

Gebruikers

Eight companies and one other university are involved in this project.

Projectleider

Dr.ir. W.M.M. Kessels

Technische Universiteit Eindhoven
Technische Natuurkunde

Postbus 513
5600 MB Eindhoven

Status van het project

Gestart	: 01-10-2003
Einddatum	: 01-02-2008

Trefwoorden

Atomaire laag epitaxie, Device operation, Low temperature processing, Nanotechnology, Plasma, Plasmatechnologie.

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