Low defect density free-standing GaN substrates by GaN boule growth via HVPE (NAF.6937)

This proposal aims at the realization of GaN substrates with a very low dislocation density (<1x 10⁵ cm^-2 ) which will be suitable for high power devices. This will be realized by a combination of Hydride Vapor Phase Epitaxy (HVPE) growth and new, defect reducing techniques. HVPE is the growth technique of choice because of its high growth rate (up to 400 µm per hour), good quality material, simplicity and scalability.

These substrates with low defect densities will be used for the realization of laser diodes in the wavelength range from green to ultraviolet with the most important application in high density optical data storage and for high power LD for the next generation of solid state lighting for the projector applications.The need for these substrates is illustrated by the large support given to this project by Philips Research, Chalmers University, Philips Semiconductors en Cedova.