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Transport in Rarefied Gases in Next Generation Photo-Lithography Machines

Project nummer 
Deelnemende kennisinstellingen 
Prof. dr. ir. E.H. van BrummelenTechnische Universiteit Eindhoven
Faculteit Werktuigbouwkunde
Multi-Scale Engineering Fluid Dynamics


Type project 
11 november 2016
30 april 2022
High Tech Systemen & Materialen (HTSM)

Moore’s law, which states that computing power doubles every two years, is enabled by perpetual advances in semi-conductor technology. To sustain Moore’s law in the coming decades, very fundamental challenges must be confronted. One of these challenges pertains to heat and mass transport in the rarefied gas flows that occur in the exposure region of next-generation Extreme Ultra Violet (EUV) Photo-Lithography Machines (PLM). The power of the EUV light leads to local thermal expansions of the wafer, causing aberrations in the printed nanometer structures, and to discharge of debris in the exposure region. To control the thermal expansion and contain the contamination, small amounts of gas are injected into the exposure region. However, as the exposure process occurs under near-vacuum conditions the resulting gas flow is rarefied. Heat and mass transport in rarefied gas flows are highly complex, and contemporary understanding of these phenomena is very limited. In the RARETRANS project, the researchers will investigate these phenomena, and develop new models and computer-simulation methods to assist developers in designing the next-generation EUV PLM.